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Hotona — Fri, 04 Jul 2014 00:05:10 +0100

Danke vielmals.

A perfect basic cheap michael kors handbags

pojun — Wed, 26 Jun 2013 22:53:56 +0100

A perfect basic affordable michael kors handbags For makeup, getting michael kors leather bags in ranges of sizes is crucial. A cosmetics bag is a good technique to organise your make up no matter exactly where you go. You are able to keep tiny tubes and pots in 1 and lipstick and applicators in other people. The regular size of a makeup bag is 15cm by 10cm but you'll find all kinds of sizes, of course so youll find a smaller sized or larger cosmetic bag for those who will need it. For everyday use, a cosmetic bag need to be of a size that fits into your handbag easily. It is possible to organise your makeup by sort so eye makeup all goes into 1 cosmetic bag though powder, concealer and foundation can go into yet another. Straightforward cosmetics bags just are huge zipper pouches and a few cosmetic bags have sections; they have slots for maintaining brushes and eye brow pencils or lip pencils, and compartments for toiletries, appliances for instance sharpeners, and/or jewellery. A number of types of cosmetic bags also have person compartments for liquid things. Some possess a see-through front, elastic straps and clips or rings. A perfect fundamental low-cost michael kors handbags would include: a tiny comb, mirror, moisturizer, cream blush compact, tiny pot of translucent powder, mini foundation, lip pencil, lip balm, lip stick/lip gloss, blush brush, perfume atomiser, cover stick, ponytail rubber bands and band aids. By why limit yourself to just cosmetics? Cosmetics bags are available in so many handy shapes ans sizes they will be utilized for all sorts of other items, from storing spare tools inside the car or truck, fishing tackle, to standard initially help gear (bandage, band aids, disinfectant, scissors) for brief bush walks. Listed below are some other recommendations for option uses for cosmetic bags: Store hair accessories like tail combs, afro combs, elastic bands, hair clips and hair pins. Hold haberdashery for example spools of thread, loose buttons, pins and needles. If youre a collector, shield precious coins and stamps by putting them into an appropriately sized cosmetic bag. When they are certainly not becoming utilized, you are able to hold your technical gadgets, for instance iPod, headphones and mobile telephone, within a cosmetic pouch to prevent scratching and damage. Carry lead pencils, a spare pen, highlighter in a cosmetics bag. The compartments might be applied to retailer a pencil sharpener and rubber. Not just do cosmetics bags are available in all shapes and sizes, they are also developed in a wide selection of distinct materials, which includes plastic, neoprene, cloth fabric and much more. Plastic is actually a extremely popular material, though, because it has the benefit of being simple to clean. For long term storage, or if topic to alterations of temperature, this may not be the very best as plastic might crack and youll discover the contents spilt all over the spot. Transparent low-cost handbags and shoes are very handy as you are able to tell at a glance what you've inside. There are actually some gorgeous fabric purses made use of for holding makeup and also other personal products too, and classic Japanese patterns are proving to be more than a passing trend. Air Jordan four(IV) - Men's Basketball Shoes - Nike, Jordan & Extra Related Articles - , affordable michael kors handbags, inexpensive handbags and footwear, Email this Article to a Friend! Receive Articles like this one direct to your email box! Subscribe for free today!

A perfect basic cheap michael kors handbags

pojun — Wed, 26 Jun 2013 00:45:23 +0100

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Cheap Michael Kors iPhone Cases-Black

pojun — Sun, 23 Jun 2013 06:57:38 +0100

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IC NE555,NE555N AND NE555P

pojun — Thu, 06 Dec 2012 06:54:54 +0100

<a href=http://www.ne555.info/>NE555</a> features
.Turn-off time less than 2ms
.Max. operating frequency greater than 500kHz
.Timing from microseconds to hours
.Operates in both astable and monostable modes
.High output current
.Adjustable duty cycle
.TTL compatible
.Temperature stability of 0.005% per

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6MBP150RA060 supplier

pojun — Wed, 13 Jun 2012 13:03:37 +0100

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6MBP150RA060
IGBT-IPM R series 600V / 150A 6 in one-package
Features
Â· Temperature protection provided by directly detecting the junction temperature of the IGBTs
Â· Low power loss and soft switching
Â· High performance and high reliability IGBT with overheating protection
Â· Higher reliability because of a big decrease in number of parts in built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25Â°C unless otherwise specified)
Fig.1 Measurement of case temperature
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 NÂ·m
Electrical characteristics of power circuit (at Tc=Tj=25Â°C, Vcc=15V)
Symbol
Condition
Collector current at off signal input
VCE=600V input terminal open
Collector-Emitter saturation voltage
VCE(sat)
Ic=150A
Forward voltage of FWD
-Ic=150A
6MBP150RA060 IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25Â°C, Vcc=15V)
Symbol
Condition
Power supply current of P-line side Pre-driver(one unit)
fsw=0 to 15kHz Tc=-20 to 100Â°C *7
Power supply current of N-line side three Pre-driver
fsw=0 to 15kHz Tc=-20 to 100Â°C *7
Input signal threshold voltage (on/off)
Vin(th)
Input zener voltage
Rin=20k ohm
Over heating protection temperature level
VDC=0V, Ic=0A, Case temperature, Fig.1
Hysteresis
IGBT chips over heating protection temperature level
surface of IGBT chips
Hysteresis
Collector current protection level INV
Tj=125Â°C
Over current protection delay time
Tj=25Â°C Fig.2
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Tj=25Â°C Fig.3
Limiting resistor for alarm
*7 Switching frequency of IPM
Dynamic characteristics(at Tc=Tj=125Â°C, Vcc=15V)
Symbol
Condition
Switching time (IGBT)
IC=150A, VDC=300V
Switching time (FWD)
IF=150A, VDC=300V
Definition of tsc
Thermal characteristics( Tc=25Â°C)
Symbol
Junction to Case thermal resistance
Rth(j-c)
Rth(j-c)
Case to fin thermal resistance with compound
Rth(c-f)
Recommendable value
Symbol
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque
Mounting (M5)
Terminal (M5)
6MBP150RA060 IGBT-IPM
Block diagram
Outline drawings, mm
Pre-drivers include following functions a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit d) Over current protection
e) IGBT chip over heating protection
Mass : 440g
Characteristics (Representative)
Control circuit
Power supply current vs. Switching frequency
Input signal threshold voltage
Tj=25Â°C
Tj=100Â°C
Â·Â·Â·Â·Â·Â·Â·Â·Â· P-side
vs. Power supply voltage
Â·Â·Â·Â·Â·Â·Â·Â·Â· Tj=125Â°C
0 5 10 15 20 25
12 13 14 15 16 17 18
Switching frequency fsw (kHz) Power supply voltage Vcc (V)
Undervoltage vs. Junction temperature
Undervoltage hysterisis vs. Junction temperature
20 40 60 80 100 120 140 20 40 60 80 100 120 140
Junction temperature Tj (Â°C)
Junction temperature Tj (Â°C)
Alarm hold time vs. Power supply voltage
Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC
12 13 14 15 16 17 18
Power supply voltage Vcc (V)
12 13 14 15 16 17 18
Power supply voltage Vcc (V)
Inverter
Collector current vs. Collector-Emitter voltage
Tj=25Â°C
Collector current vs. Collector-Emitter voltage
Tj=125Â°C
0 1 2 3 4 0 1 2 3 4
Collector-Emitter voltage VCE (V)
Collector-Emitter voltage VCE (V)
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=25Â°C
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=125Â°C
0 50 100 150 200 250 0 50 100 150 200 250
Collector current IC (A)
Collector current IC (A)
Forward current vs. Forward voltage
0 1 2 3 4
Foeward voltage VF (V)
Reverse recovery characteristics trr, Irr, vs. IF
0 50 100 150 200 250
Foeward current IF (A)
Inverter
Transient thermal resistance
Reverse biased safe operating area
Vcc=15V, Tj<125Â°C
0.001 0.01 0.1 1
Pulse width Pw (sec.)
0 100 200 300 400 500 600 700
Collector-Emitter voltage VCE (V)
Power derating for IGBT (per device)
0 20 40 60 80 100 120 140 160
Case temperature Tc (Â°C)
Power derating for FWD (per device)
0 20 40 60 80 100 120 140 160
Case temperature Tc (Â°C)
Switching loss vs. Collector current
Edc=300V, Vcc=15V, Tj=25Â°C
0 50 100 150 200 250
Collector current Ic (A)
Switching loss vs. Collector current
Edc=300V, Vcc=15V, Tj=125Â°C
0 50 100 150 200 250
Collector current Ic (A)
Overcurrent protection vs. Junction temperature
Vcc=15V
0 20 40 60 80 100 120 140
Junction temperature Tj (Â°C)
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2N5191 datasheet

pojun — Fri, 25 May 2012 01:17:22 +0100

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<a href=http://www.datasheet-photos.com/Product/2N5191.html>2N5191</a> datasheet
2N5191 ic
2N5191 pinout
2N5191 buy
ON Semiconductor
Silicon NPN Power Transistors
. . . for use in power amplifier and switching circuits, â€?excellent safe area limits. Complement to PNP 2N5194, 2N5195.
*MAXIMUM RATINGS
2N5191
2N5192*
*ON Semiconductor Preferred Device
4 AMPERE POWER TRANSISTORS SILICON NPN
60â€?0 VOLTS
40 WATTS
STYLE 1:
PIN 1. EMITTER
3 2. COLLECTOR
1 3. BASE
THERMAL CHARACTERISTICS
CASE 77â€?9
TOâ€?25AA TYPE
*ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collectorâ€“Emitter Sustaining Voltage (1)
(IC = 0.1 Adc, IB = 0) 2N5191
VCEO(sus)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0) 2N5191 (VCE = 80 Vdc, IB = 0) 2N5192
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N5191 (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N5192 (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125 C) 2N5191 (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125 C) 2N5192
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) 2N5191 (VCB = 80 Vdc, IE = 0) 2N5192
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ïƒ? Semiconductor Components Industries, LLC, 2002
April, 2002 â€?Rev. 10
1 Publication Order Number:
2N5191/D
*ELECTRICAL CHARACTERISTICS â€?continued (TC = 25 C unless otherwise noted)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain (2)
(IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5191
(IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5191
Collectorâ€“Emitter Saturation Voltage (2) (IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
Baseâ€“Emitter On Voltage (2)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
DYNAMIC CHARACTERISTICS
Currentâ€“Gain â€?Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
(2) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
*Indicates JEDEC Registered Data.
TJ = 150ï‚°C
VCE = 2.0 V
VCE = 10 V
0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
2.0 3.0
TJ = 25ï‚°C
IC = 10 mA
100 mA 1.0 A 3.0 A
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0
5.0 7.0 10
20 30 50 70 100 200 300
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
TJ = 25ï‚°C
*APPLIES FOR IC/IB ï‚?hFE @ VCE 2.0 V
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
TJ = - 65ï‚°C to +150ï‚°C
* V for VCE(sat)
V for VBE
0.01 0.02 0.03 0.05
0.2 0.3 0.5
1.0 2.0 3.0 4.0
0.005 0.01 0.02 0.03 0.05
0.2 0.3
1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. â€œOnâ€?Voltages
IC, COLLECTOR CURRENT (AMP)
Figure 4. Temperature Coefficients
VCE = 30 V TJ = 150ï‚°C
IC ï‚?ICES
IC = 10 x ICES
VCE = 30 V
REVERSE FORWARD
IC = 2 x ICES
(TYPICAL ICES VALUES OBTAINED FROM FIGURE 5)
- 0.3 - 0.2 - 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cutâ€“Off Region
20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (ï‚°C)
Figure 6. Effects of Baseâ€“Emitter Resistance
TURN-ON PULSE APPROX
TJ = + 25ï‚°C
Vin 0
Cjd << Ceb
VEB(off) t1
+11 V Vin
t1 ï‚?7.0 ns
100 < t2 < 500 s
t3 < 15 ns
DUTY CYCLE ï‚?2.0%
- 4.0 V
RB and RC varied to obtain desired
current levels
0.2 0.3 0.5 1.0
3.0 5.0 10
20 30 40
TURN-OFF PULSE
APPROX - 9.0 V
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Switching Time Equivalent Test Circuit
Figure 8. Capacitance
tr @ VCC = 30 V
IC/IB = 10
TJ = 25ï‚°C
tf @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB(off) = 2.0 V
tf @ VCC = 10 V
IB1 = IB2
IC/IB = 10
t ï‚?= t - 1/8 t
s s f
0.05 0.07 0.1 0.2 0.3
1.0 2.0
3.0 4.0
0.05 0.07 0.1 0.2 0.3
TJ = 25ï‚°C
1.0 2.0
3.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 9. Turnâ€“On Time
IC, COLLECTOR CURRENT (AMP)
Figure 10. Turnâ€“Off Time
TJ = 150ï‚°C
There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate IC â€?VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 150
C; TC is
SECONDARY BREAKDOWN LIMIT
0.5 THERMAL LIMIT AT TC = 25ï‚°C
variable depending on conditions. Second breakdown pulse
limits a re valid for duty cycles to 10% provided TJ(pk)
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED VCEO
C. At high case temperatures, thermal limitations
2.0 5.0 10 20 50 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 11. Rating and Thermal Data
Activeâ€“Region Safe Operating Area
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
D = 0.5
SINGLE PULSE
JC(max) = 3.12ï‚°C/W 2N5190-92
JC(max) = 2.08ï‚°C/W MJE5190-92
0.02 0.03
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 50 100 200 t, TIME OR PULSE WIDTH (ms)
Figure 12. Thermal Response
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
DUTY CYCLE, D = t1 f - tP
A train of periodical power pulses can be represented by the model shown in Figure A. Using the model and the device thermal response, the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles.
To find JC(t), multiply the value obtained from Figure 12 by the steady state value JC.
Example:
The 2N5190 is dissipating 50 watts under the following conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2).
Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
the reading of r(t1, D) is 0.27.
Figure A
PEAK PULSE POWER = PP
The peak rise in function temperature is therefore :
T = r(t) x PP x JC = 0.27 x 50 x 3.12 = 42.2 C
PACKAGE DIMENSIONS
TOâ€?25AA CASE 77â€?9
ISSUE W
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1 2 3
0.25 (0.010)
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. â€œTypicalâ€?parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including â€œTypicalsâ€?must be validated for each customer application by customerâ€™s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303â€?75â€?175 or 800â€?44â€?860 Toll Free USA/Canada Fax: 303â€?75â€?176 or 800â€?44â€?867 Toll Free USA/Canada Email:
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JAPAN: ON Semiconductor, Japan Customer Focus Center
4â€?2â€? Nishiâ€“Gotanda, Shinagawaâ€“ku, Tokyo, Japan 141â€?031
Phone: 81â€?â€?740â€?700
Email:
ON Semiconductor Website:
For additional information, please contact your local
Sales Representative.
2N5191/D

2N3903 datasheet

pojun — Tue, 15 May 2012 22:26:11 +0100

2N3899 datasheet

pojun — Tue, 15 May 2012 15:39:24 +0100

BA5974FP datasheet

pojun — Sat, 12 May 2012 01:39:49 +0100

<a href=http://www.utsource.net/><img>http://photos.utsource.net/gif/utsource1.gif</img></a>
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CD ãƒ—ãƒ¬ãƒ¼ãƒ¤ç”?4ch å…¥ã‚Š BTL ãƒ‰ãƒ©ã‚¤ãƒ
BA5974FP
BA5974FP ã¯ã€CD ãƒ—ãƒ¬ãƒ¼ãƒ¤ç”¨ã®ãƒ¢ãƒ¼ã‚¿ã€åŠã³ã€ã‚¢ã‚¯ãƒãƒ¥ã‚¨ãƒ¼ã‚¿é§†å‹•ç”¨ã«é–‹ç™ºã•ã‚Œã?4ch å…¥ã‚Š BTL ãƒ‰ãƒ©ã‚¤ãƒã§ã™ã€?ã‚¹ãƒ”ãƒ³ãƒ‰ãƒ«ä»¥å¤–ã® 3ch ã¯ãƒ‡ã‚¸ã‚¿ãƒ«ã‚µãƒ¼ãƒœ LSI ã?PWM å‡ºåŠ›ãŒã€å¤–ä»˜ã‘ãªã—ã§ç›´çµã§ãã¾ã™ã€‚ï¼ˆ1 æ¬¡ãƒ•ã‚£ãƒ«ã‚¿å†…è”µï¼‰
CD/MDã€CD-ROM
1) 4ch ã?BTL ãƒ‰ãƒ©ã‚¤ãƒã€?2) HSOP28 ãƒ‘ãƒƒã‚±ãƒ¼ã‚¸ã‚’æŽ¡ç”¨ã—ã¦ã„ã‚‹ãŸã‚ã€ã‚»ãƒƒãƒˆã®å°åž‹åŒ–ãŒã¯ã‹ã‚Œã‚‹ã€?3) 3ch ã?PWM å…¥åŠ›ç›´çµã‚¿ã‚¤ãƒ—ã§ï¼? æ¬¡ãƒ•ã‚£ãƒ«ã‚¿å†…è”µï¼‰ã€å¤–ä»˜ã‘ RC ã§ãƒ•ã‚£ãƒ«ã‚¿å®šæ•°ãŒå¯å¤‰ã§ãã‚‹ã€?4) ãƒ€ã‚¤ãƒŠãƒŸãƒƒã‚¯ãƒ¬ãƒ³ã‚¸ãŒåºƒã„ã€‚ï¼ˆPreVCC=8Vã€PowVCC=8Vã€RL=8ï—æ™‚ã€?.6Vï¼ˆTyp.ï¼‰ï¼‰
5) ã‚µãƒ¼ãƒžãƒ«ã‚·ãƒ£ãƒƒãƒˆãƒ€ã‚¦ãƒ³å›žè·¯ã‚’å†…è”µã€?6) å¤–éƒ¨ãƒŸãƒ¥ãƒ¼ãƒˆç«¯åã«ã‚ˆã‚Šã€å‡ºåŠ›é›»æµã‚’ãƒŸãƒ¥ãƒ¼ãƒˆã™ã‚‹ã“ã¨ãŒå¯èƒ½ã€?!çµ¶å¯¾æœ€å¤§å®šæ ¼ï¼ˆTa=25ï‚°Cï¼?Parameter
Symbol
Limits
ã€€1.7ï¼? ï¿?å‹•ä½œæ¸©åº¦ç¯„å›²ï¿?ï¼?5ï½žï¼‹85ï¿?ä¿å˜æ¸©åº¦ç¯„å›²ï¿?ï¼?5ï½žï¼‹150
ï¼?70mmÃ—70mmã€åŽšã?.6mmã€éŠ…ç®”å æœ‰çŽ‡3ï¼…æœªæº€ã€ã‚¬ãƒ©ã‚¹ã‚¨ãƒã‚ã‚·åŸºæ¿å®Ÿè£…æ™‚ã€‚ï¿½
ã€€Taï¼?5â„ƒä»¥ä¸Šã§ä½¿ç”¨ã™ã‚‹å ´åˆã¯ã€?â„ƒã«ã¤ã13.6mWã‚’æ¸›ã˜ã‚‹ã€‚ï¿½
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Parameter
Symbol
Limits
ãƒ—ãƒªéƒ¨é›»æºé›»åœ§ï¿½
PreVCCï¿?7.0ï½?3.2ï¿?ãƒ‘ãƒ¯ãƒ¼éƒ¨é›»æºé›»åœ§ï¿?PowVCC
ã€€ 7.0ï½žPreVCC
!ãƒ–ãƒãƒƒã‚¯ãƒ€ã‚¤ã‚¢ã‚°ãƒ©ãƒ?28 27 26 25
24 23 22
21 20 19
18 17 16 15
10k 100k
R INTER-
50k Pow
50k Vcc
D D D D
THERMAL
LEVEL SHIFT
F INTER-
SHUTDOWN
INTER- FACE
1 2 3 4 5 6 7 8 9 10 11 12 13 14
Pin. No
VrefOUTï¿?å†…éƒ¨å‚ç…§é›»åœ§å‡ºåŠ›ç«¯åï¿?ch1FINï¿?ch1PWMãƒ•ã‚©ãƒ¯ãƒ¼ãƒ‰å…¥åŠ›ï¿½
ch1RINï¿?ch1PWMãƒªãƒãƒ¼ã‚¹å…¥åŠ›ï¿?CAPAIN1ï¿?å¤–ä»˜ã‘CAPAæŽ¥ç¶šç«¯å1ï¿?ch2FINï¿?ch2PWMãƒ•ã‚©ãƒ¯ãƒ¼ãƒ‰å…¥åŠ›ï¿½
ch2RINï¿?ch2PWMãƒªãƒãƒ¼ã‚¹å…¥åŠ›ï¿?CAPAIN2ï¿?å¤–ä»˜ã‘CAPAæŽ¥ç¶šç«¯å2ï¿?VrefINï¿?å†…éƒ¨å‚ç…§é›»åœ§å…¥åŠ›ç«¯åï¿?POWVCCï¿?ãƒ‘ãƒ¯ãƒ¼éƒ¨é›»æºé›»åœ§ï¼ˆch1ï¼?ï¼‰ï¿½
ch2OUTRï¿?ch2ãƒªãƒãƒ¼ã‚¹å‡ºåŠ›ç«¯åï¿?ch2OUTFï¿?ch2ãƒ•ã‚©ãƒ¯ãƒ¼ãƒ‰å‡ºåŠ›ç«¯åï¿½
ch1OUTRï¿?ch1ãƒªãƒãƒ¼ã‚¹å‡ºåŠ›ç«¯åï¿?ch1OUTFï¿?ch1ãƒ•ã‚©ãƒ¯ãƒ¼ãƒ‰å‡ºåŠ›ç«¯åï¿½
ch4OUTFï¿?ch4ãƒ•ã‚©ãƒ¯ãƒ¼ãƒ‰å‡ºåŠ›ç«¯åï¿½
ch4OUTRï¿?ch4ãƒªãƒãƒ¼ã‚¹å‡ºåŠ›ç«¯åï¿?ch3OUTFï¿?ch3ãƒ•ã‚©ãƒ¯ãƒ¼ãƒ‰å‡ºåŠ›ç«¯åï¿½
ch3OUTRï¿?ch3ãƒªãƒãƒ¼ã‚¹å‡ºåŠ›ç«¯åï¿?POWVCCï¿?ãƒ‘ãƒ¯ãƒ¼éƒ¨é›»æºé›»åœ§ï¼ˆch3ï¼?ï¼‰ï¿½
ãƒŸãƒ¥ãƒ¼ãƒˆç«¯åï¿?CAPAIN3ï¿?å¤–ä»˜ã‘CAPAæŽ¥ç¶šç«¯å3ï¿?ch3RINï¿?ch3PWMãƒªãƒãƒ¼ã‚¹å…¥åŠ›ï¿?ch3FINï¿?ch3PWMãƒ•ã‚©ãƒ¯ãƒ¼ãƒ‰å…¥åŠ›ï¿½
ch4SINï¿?ch4å…¥åŠ›ç«¯åï¿?ch4SIN'ï¿?ch4ã‚²ã‚¤ãƒ³èª¿æ•´ç«¯åï¿½
ch4BINï¿?ch4ãƒã‚¤ã‚¢ã‚¹å…¥åŠ›ç«¯åï¿?PREVCC
ãƒ—ãƒªéƒ¨é›»æºé›»åœ§ï¿½
!å…¥å‡ºåŠ›å›žè·¯å›³
2,5,24pin
3,6,23pin
11ï½?8pin
4,7,22pin
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Parameter
Symbol
Conditions
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1mAã€€ã‚½ãƒ¼ã‚¹ï¼Œã‚·ãƒ³ã‚¯ï¿½
ãƒŸãƒ¥ãƒ¼ãƒˆãƒ»ã‚ªãƒ•é›»åœ§ï¿½
VMOFFï¿?ãƒŸãƒ¥ãƒ¼ãƒˆãƒ»ã‚ªãƒ³é›»åœ§ï¿½
ã€ˆã‚¹ãƒ”ãƒ³ãƒ‰ãƒ«ä»¥å¤–ã®ãƒ‰ãƒ©ã‚¤ãƒã€‰ï¿½ï¿?ï¿? ï¿? ï¿? ï¿? ï¿?å…¥åŠ›â€œHâ€ãƒ¬ãƒ™ãƒ«é›»åœ§ï¿?å…¥åŠ›â€œLâ€ãƒ¬ãƒ™ãƒ«é›»åœ§ï¿?å…¥åŠ›â€œHâ€ãƒ¬ãƒ™ãƒ«é›»æµï¿?å…¥åŠ›â€œLâ€ãƒ¬ãƒ™ãƒ«é›»æµFå´ï¿½ å…¥åŠ›â€œLâ€ãƒ¬ãƒ™ãƒ«é›»æµRå´ï¿½ å‡ºåŠ›ã‚ªãƒ•ã‚»ãƒƒãƒˆé›»åœ§ï¿½ æœ€å¤§å‡ºåŠ›æŒ¯å¹…ï¿½
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å…¥åŠ›ãƒã‚¤ã‚¢ã‚¹é›»æµï¿?å‡ºåŠ›ã‚ªãƒ•ã‚»ãƒƒãƒˆï¿½
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Ipre A
Vsin F
INTF R OUT
V V V V
28 27 26
25 24 23 22
21 20
19 18
17 16 15
10k 100k
D D D
INTER- FACE
F INTER-
F INTER-
LEVEL SHIFT
THERMAL SHUTDOWN
F R Pow
1 2 3 4 5 6 7 8 9 10 11 12 13 14
1Î¼F +
F R INTF F OUT
R INTF OUT
V V V V
INTF F R OUT
PR IN PF
PR IN PF Vr
IL IP VL
!æ¸¬å®šå›žè·¯ã‚¹ã‚¤ãƒƒãƒè¡?ã‚? ã‚? ãƒ? ãƒ?
æ¸? å®? ç‚?
Ipreï¼‹Ipow
Î”VBIAS
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Vf, Vr
If, Ir
Vfï¼Vrï¼?ã€”Vã€?Vfï¼?ã€”Vã€?Vrï¼?ã€”Vã€?ICONST
Î”trï¼Î”tf
Vfï¼Vrï¼?V
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Vbï¼Vsinï¼?.5V
VO4, Vsin
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F SW 1
R SW 2
Hãƒ»ãƒ»ãƒ?.4Vä»¥ä¸Šï¿?Lãƒ»ãƒ»ãƒ?.5Vä»¥ä¸‹ï¿?å‡ºåŠ› Vref
1V / Î¼s
OUT2ï¼?ï¼‰ï¿½
OUT1ï¼?ï¼‰ï¿½
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SLED MOTOR
TRACKING COIL
FOCUS COIL
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AMBIENT TEMPERATUREï¼šTaï¼ˆâ„ƒï¼‰ï¿½
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