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Forum Übersicht » Allgemeines » Allgemeines » TPA6112A2 datasheet
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TPA6112A2 datasheet
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TSM2301
-20V P-Channel Enhancement Mode MOSFET
Features
Pin assignment:
1. Gate
2. Source
3. Drain
VDS = -20V
RDS (on), Vgs @ -4.5V, Ids @ -2.8A =130mΩ
RDS (on), Vgs @ -2.5V, Ids @ -2.0A =190mΩ
�Advanced trench process technology
�High density cell design for ultra low on-resistance
�Excellent thermal and electrical capabilities
�Compact and low profile SOT-23 package
Block Diagram Ordering Information
Part No. Packing Package
TSM2301CX Tape & Reel SOT-23
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -20V V
Gate-Source Voltage VGS ±8 V
Continuous Drain Current ID -2.3 A
Pulsed Drain Current IDM -10 A
Maximum Power Dissipation
Ta = 25 oC 1.25
Ta = 75 oC
Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 oC
Thermal Performance
Parameter Symbol Limit Unit
Lead Temperature (1/8�from case) TL 5 S Junction to Ambient Thermal Resistance (PCB mounted) Rθja 100 oC/W
Note: Surface mounted on FR4 board t<=5sec.
Electrical Characteristics
Ta = 25 oC, unless otherwise noted
Parameter Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0V, ID = - 250uA BVDSS -20 -- -- V Drain-Source On-State Resistance VGS = -4.5V, ID = -2.8A RDS(ON) -- 95 130
Drain-Source On-State Resistance VGS = -2.5V, ID = -2.0A RDS(ON) -- 122 190
Gate Threshold Voltage VDS = VGS, ID = - 250uA VGS(TH) -0.45 -- -- V Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V IDSS -- -- -1.0 uA Gate Body Leakage VGS = ±8V, VDS = 0V IGSS -- -- ±100 nA
On-State Drain Current VDS �10V, VGS = -5V ID(ON) -6 -- -- A
Forward Transconductance VDS = - 5V, ID = - 4A gfs -- 6.5 -- S
Dynamic
Total Gate Charge Qg -- 5.4 10
VDS = -6V, ID = -2.8A,
Gate-Source Charge Qgs -- 0.8 -- nC VGS = -4.5V
Gate-Drain Charge
Qgd -- 1.1 --
Turn-On Delay Time td(on) -- 5 25
VDD = -6V, RL = 6Ω,
Turn-On Rise Time tr -- 19 60
ID = -1A, VGEN = -4.5V, nS Turn-Off Delay Time td(off) -- 95 110
RG = 6Ω
Turn-Off Fall Time
tf -- 65 80
Input Capacitance Ciss -- 447 -- VDS = -6V, VGS = 0V,
Output Capacitance Coss -- 127 -- pF
f = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Diode
Crss -- 80 --
Max. Diode Forward Current IS -- -- -2.4 A Diode Forward Voltage IS = - 1.6A, VGS = 0V VSD -- - 0.8 -1.2 V
Note : pulse test: pulse width <=300uS, duty cycle <=2%
Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
Marking Indication
P/N: TSM2301CX Package: SOT-23
* 01 = Product code for TSM2301
* YQL = Date Code
Y = Year Code
Q = Quarter Code (Q1=A, Q2=B, Q3=C, Q4=D) L = Lot Number
SOT-23 Mechanical Drawing
SOT-23 DIMENSION MILLIMETERS INCHES
MIN MAX MIN MAX
A 2.88 2.91 0.113 0.115
B 0.39 0.42 0.015 0.017
C 1.78 2.03 0.070 0.080
D 0.51 0.61 0.020 0.024
E 1.59 1.66 0.063 0.065
F 1.04 1.08 0.041 0.043
G G 0.07 0.09 0.003 0.004



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