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TPA6112A2 datasheet |
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Gruppe: Benutzer Rang: Beiträge: 16 Mitglied seit: 05.03.2012 IP-Adresse: gespeichert ![]() | <a href=http://www.utsource.net/><img>http://photos.utsource.net/gif/utsource1.gif</img></a> product details:<a href=http://www.utsource.net/TSM2301CX.html>http://www.utsource.net/TSM2301CX.html</a> <b>If you want to buy this product please visit:</b><a href=http://www.utsource.net/ic-datasheet/TSM2301CX-1581119.html><b>http://www.utsource.net/ic-datasheet/TSM2301CX-1581119.html</b></a> Popular search: <a href=http://www.utsource.net/ic-datasheet/TSM2301CX-1581119.html>TSM2301CX</a> datasheet TSM2301CX for sale TSM2301CX pdf TSM2301CX buy TSM2301 -20V P-Channel Enhancement Mode MOSFET Features Pin assignment: 1. Gate 2. Source 3. Drain VDS = -20V RDS (on), Vgs @ -4.5V, Ids @ -2.8A =130mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A =190mΩ ï€?Advanced trench process technology ï€?High density cell design for ultra low on-resistance ï€?Excellent thermal and electrical capabilities ï€?Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. Packing Package TSM2301CX Tape & Reel SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20V V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 A Pulsed Drain Current IDM -10 A Maximum Power Dissipation Ta = 25 oC 1.25 Ta = 75 oC Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8â€?from case) TL 5 S Junction to Ambient Thermal Resistance (PCB mounted) Rθja 100 oC/W Note: Surface mounted on FR4 board t<=5sec. Electrical Characteristics Ta = 25 oC, unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0V, ID = - 250uA BVDSS -20 -- -- V Drain-Source On-State Resistance VGS = -4.5V, ID = -2.8A RDS(ON) -- 95 130 Drain-Source On-State Resistance VGS = -2.5V, ID = -2.0A RDS(ON) -- 122 190 Gate Threshold Voltage VDS = VGS, ID = - 250uA VGS(TH) -0.45 -- -- V Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V IDSS -- -- -1.0 uA Gate Body Leakage VGS = ±8V, VDS = 0V IGSS -- -- ±100 nA On-State Drain Current VDS â‰?10V, VGS = -5V ID(ON) -6 -- -- A Forward Transconductance VDS = - 5V, ID = - 4A gfs -- 6.5 -- S Dynamic Total Gate Charge Qg -- 5.4 10 VDS = -6V, ID = -2.8A, Gate-Source Charge Qgs -- 0.8 -- nC VGS = -4.5V Gate-Drain Charge Qgd -- 1.1 -- Turn-On Delay Time td(on) -- 5 25 VDD = -6V, RL = 6Ω, Turn-On Rise Time tr -- 19 60 ID = -1A, VGEN = -4.5V, nS Turn-Off Delay Time td(off) -- 95 110 RG = 6Ω Turn-Off Fall Time tf -- 65 80 Input Capacitance Ciss -- 447 -- VDS = -6V, VGS = 0V, Output Capacitance Coss -- 127 -- pF f = 1.0MHz Reverse Transfer Capacitance Source-Drain Diode Crss -- 80 -- Max. Diode Forward Current IS -- -- -2.4 A Diode Forward Voltage IS = - 1.6A, VGS = 0V VSD -- - 0.8 -1.2 V Note : pulse test: pulse width <=300uS, duty cycle <=2% Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) Marking Indication P/N: TSM2301CX Package: SOT-23 * 01 = Product code for TSM2301 * YQL = Date Code Y = Year Code Q = Quarter Code (Q1=A, Q2=B, Q3=C, Q4=D) L = Lot Number SOT-23 Mechanical Drawing SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX A 2.88 2.91 0.113 0.115 B 0.39 0.42 0.015 0.017 C 1.78 2.03 0.070 0.080 D 0.51 0.61 0.020 0.024 E 1.59 1.66 0.063 0.065 F 1.04 1.08 0.041 0.043 G G 0.07 0.09 0.003 0.004 | |
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