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2N5191 datasheet
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<a href=http://www.datasheet-photos.com/Product/2N5191.html>2N5191</a> datasheet
2N5191 ic
2N5191 pinout
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ON Semiconductor
Silicon NPN Power Transistors
. . . for use in power amplifier and switching circuits, �excellent safe area limits. Complement to PNP 2N5194, 2N5195.
*MAXIMUM RATINGS
2N5191
2N5192*
*ON Semiconductor Preferred Device
4 AMPERE POWER TRANSISTORS SILICON NPN
60�0 VOLTS
40 WATTS
STYLE 1:
PIN 1. EMITTER
3 2. COLLECTOR
1 3. BASE
THERMAL CHARACTERISTICS
CASE 77�9
TO�25AA TYPE
*ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 0.1 Adc, IB = 0) 2N5191
VCEO(sus)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0) 2N5191 (VCE = 80 Vdc, IB = 0) 2N5192
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N5191 (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N5192 (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125 C) 2N5191 (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125 C) 2N5192
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) 2N5191 (VCB = 80 Vdc, IE = 0) 2N5192
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
� Semiconductor Components Industries, LLC, 2002
April, 2002 �Rev. 10
1 Publication Order Number:
2N5191/D
*ELECTRICAL CHARACTERISTICS �continued (TC = 25 C unless otherwise noted)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain (2)
(IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5191
(IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5191
Collector–Emitter Saturation Voltage (2) (IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
Base–Emitter On Voltage (2)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
DYNAMIC CHARACTERISTICS
Current–Gain �Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
(2) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
*Indicates JEDEC Registered Data.
TJ = 150ï‚°C
VCE = 2.0 V
VCE = 10 V
0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
2.0 3.0
TJ = 25ï‚°C
IC = 10 mA
100 mA 1.0 A 3.0 A
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0
5.0 7.0 10
20 30 50 70 100 200 300
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
TJ = 25ï‚°C
*APPLIES FOR IC/IB ï‚?hFE @ VCE 2.0 V
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
TJ = - 65ï‚°C to +150ï‚°C
* V for VCE(sat)
V for VBE
0.01 0.02 0.03 0.05
0.2 0.3 0.5
1.0 2.0 3.0 4.0
0.005 0.01 0.02 0.03 0.05
0.2 0.3
1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. “On�Voltages
IC, COLLECTOR CURRENT (AMP)
Figure 4. Temperature Coefficients
VCE = 30 V TJ = 150ï‚°C
IC ï‚?ICES
IC = 10 x ICES
VCE = 30 V
REVERSE FORWARD
IC = 2 x ICES
(TYPICAL ICES VALUES OBTAINED FROM FIGURE 5)
- 0.3 - 0.2 - 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cut–Off Region
20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (ï‚°C)
Figure 6. Effects of Base–Emitter Resistance
TURN-ON PULSE APPROX
TJ = + 25ï‚°C
Vin 0
Cjd << Ceb
VEB(off) t1
+11 V Vin
t1 ï‚?7.0 ns
100 < t2 < 500 s
t3 < 15 ns
DUTY CYCLE ï‚?2.0%
- 4.0 V
RB and RC varied to obtain desired
current levels
0.2 0.3 0.5 1.0
3.0 5.0 10
20 30 40
TURN-OFF PULSE
APPROX - 9.0 V
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Switching Time Equivalent Test Circuit
Figure 8. Capacitance
tr @ VCC = 30 V
IC/IB = 10
TJ = 25ï‚°C
tf @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB(off) = 2.0 V
tf @ VCC = 10 V
IB1 = IB2
IC/IB = 10
t ï‚?= t - 1/8 t
s s f
0.05 0.07 0.1 0.2 0.3
1.0 2.0
3.0 4.0
0.05 0.07 0.1 0.2 0.3
TJ = 25ï‚°C
1.0 2.0
3.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 9. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
Figure 10. Turn–Off Time
TJ = 150ï‚°C
There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate IC �VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 150
C; TC is
SECONDARY BREAKDOWN LIMIT
0.5 THERMAL LIMIT AT TC = 25ï‚°C
variable depending on conditions. Second breakdown pulse
limits a re valid for duty cycles to 10% provided TJ(pk)
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED VCEO
C. At high case temperatures, thermal limitations
2.0 5.0 10 20 50 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 11. Rating and Thermal Data
Active–Region Safe Operating Area
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
D = 0.5
SINGLE PULSE
JC(max) = 3.12ï‚°C/W 2N5190-92
JC(max) = 2.08ï‚°C/W MJE5190-92
0.02 0.03
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 50 100 200 t, TIME OR PULSE WIDTH (ms)
Figure 12. Thermal Response
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
DUTY CYCLE, D = t1 f - tP
A train of periodical power pulses can be represented by the model shown in Figure A. Using the model and the device thermal response, the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles.
To find JC(t), multiply the value obtained from Figure 12 by the steady state value JC.
Example:
The 2N5190 is dissipating 50 watts under the following conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2).
Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
the reading of r(t1, D) is 0.27.
Figure A
PEAK PULSE POWER = PP
The peak rise in function temperature is therefore :
T = r(t) x PP x JC = 0.27 x 50 x 3.12 = 42.2 C
PACKAGE DIMENSIONS
TO�25AA CASE 77�9
ISSUE W
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1 2 3
0.25 (0.010)
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical�parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals�must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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Sales Representative.
2N5191/D


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