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6MBP150RA060 supplier |
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Gruppe: Benutzer Rang: Beiträge: 16 Mitglied seit: 05.03.2012 IP-Adresse: gespeichert ![]() | <a href=http://www.utsource.net/><img>http://photos.utsource.net/logo/utsource7.jpg</img></a> <a href=http://www.utsource.net/6MBP150RA060.html>6MBP150RA060 supplier</a> T-13/4 (5 mm) Diffused LED Lamps 6MBP150RA060 IGBT-IPM R series 600V / 150A 6 in one-package Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N·m Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V) Symbol Condition Collector current at off signal input VCE=600V input terminal open Collector-Emitter saturation voltage VCE(sat) Ic=150A Forward voltage of FWD -Ic=150A 6MBP150RA060 IGBT-IPM Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V) Symbol Condition Power supply current of P-line side Pre-driver(one unit) fsw=0 to 15kHz Tc=-20 to 100°C *7 Power supply current of N-line side three Pre-driver fsw=0 to 15kHz Tc=-20 to 100°C *7 Input signal threshold voltage (on/off) Vin(th) Input zener voltage Rin=20k ohm Over heating protection temperature level VDC=0V, Ic=0A, Case temperature, Fig.1 Hysteresis IGBT chips over heating protection temperature level surface of IGBT chips Hysteresis Collector current protection level INV Tj=125°C Over current protection delay time Tj=25°C Fig.2 Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Tj=25°C Fig.3 Limiting resistor for alarm *7 Switching frequency of IPM Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V) Symbol Condition Switching time (IGBT) IC=150A, VDC=300V Switching time (FWD) IF=150A, VDC=300V Definition of tsc Thermal characteristics( Tc=25°C) Symbol Junction to Case thermal resistance Rth(j-c) Rth(j-c) Case to fin thermal resistance with compound Rth(c-f) Recommendable value Symbol DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) 6MBP150RA060 IGBT-IPM Block diagram Outline drawings, mm Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Mass : 440g Characteristics (Representative) Control circuit Power supply current vs. Switching frequency Input signal threshold voltage Tj=25°C Tj=100°C ········· P-side vs. Power supply voltage ········· Tj=125°C 0 5 10 15 20 25 12 13 14 15 16 17 18 Switching frequency fsw (kHz) Power supply voltage Vcc (V) Undervoltage vs. Junction temperature Undervoltage hysterisis vs. Junction temperature 20 40 60 80 100 120 140 20 40 60 80 100 120 140 Junction temperature Tj (°C) Junction temperature Tj (°C) Alarm hold time vs. Power supply voltage Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC 12 13 14 15 16 17 18 Power supply voltage Vcc (V) 12 13 14 15 16 17 18 Power supply voltage Vcc (V) Inverter Collector current vs. Collector-Emitter voltage Tj=25°C Collector current vs. Collector-Emitter voltage Tj=125°C 0 1 2 3 4 0 1 2 3 4 Collector-Emitter voltage VCE (V) Collector-Emitter voltage VCE (V) Switching time vs. Collector current Edc=300V, Vcc=15V, Tj=25°C Switching time vs. Collector current Edc=300V, Vcc=15V, Tj=125°C 0 50 100 150 200 250 0 50 100 150 200 250 Collector current IC (A) Collector current IC (A) Forward current vs. Forward voltage 0 1 2 3 4 Foeward voltage VF (V) Reverse recovery characteristics trr, Irr, vs. IF 0 50 100 150 200 250 Foeward current IF (A) Inverter Transient thermal resistance Reverse biased safe operating area Vcc=15V, Tj<125°C 0.001 0.01 0.1 1 Pulse width Pw (sec.) 0 100 200 300 400 500 600 700 Collector-Emitter voltage VCE (V) Power derating for IGBT (per device) 0 20 40 60 80 100 120 140 160 Case temperature Tc (°C) Power derating for FWD (per device) 0 20 40 60 80 100 120 140 160 Case temperature Tc (°C) Switching loss vs. Collector current Edc=300V, Vcc=15V, Tj=25°C 0 50 100 150 200 250 Collector current Ic (A) Switching loss vs. Collector current Edc=300V, Vcc=15V, Tj=125°C 0 50 100 150 200 250 Collector current Ic (A) Overcurrent protection vs. Junction temperature Vcc=15V 0 20 40 60 80 100 120 140 Junction temperature Tj (°C) <a href=http://www.utsource.net/6MBP150RA060.html>http://www.utsource.net/6MBP150RA060.html</a> | |
13.06.2012 14:03:37 | ![]() ![]() ![]() | |
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